EN29LV010 Datasheet, PDF (7/35 Pages) Eon Silicon Solution Inc. – 1 Megabit (128K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory

EN29LV010
whichever happens later. All data is latched on the rising edge of WE# or CE#, whichever happens
first. The system is not required to provide further controls or timings. The device automatically
provides internally generated program / erase pulses and verifies the programmed /erased cells’
margin. The host system can detect completion of a program or erase operation by reading the
DQ[7] (Data# Polling) and DQ[6] (Toggle) status bits.
The ‘Command Definitions’ section of this document provides details on the specific device
commands implemented in the EN29LV010.
Sector Protection/Unprotection
The hardware sector protection feature disables both program and erase operations in any sector. The
hardware sector unprotection feature re-enables both program and erase operations in previously
protected sectors.
Sector protection/unprotection is intended only for programming equipment. This method requires
V_ID be applied to both OE# and A9 pin and non-standard microprocessor timings are used. This
method is described in a separate document called EN29LV010 Supplement, which can be obtained
by contacting a representative of Eon Silicon Solution, Inc.
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device energy consumption. The device automatically
enables this mode when addresses remain stable for t_acc + 30ns. The automatic sleep mode is
independent of the CE#, WE# and OE# control signals. Standard address access timings provide
new data when addresses are changed. While in sleep mode, output is latched and always
available to the system. ICC₄ in the DC Characteristics table represents the automatic sleep more
current specification.
This Data Sheet may be revised by subsequent versions
7
or modifications due to changes in technical specifications.
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. B, Issue Date: 2004/01/05