EN25S40A Datasheet, PDF (67/68 Pages) Eon Silicon Solution Inc. – 4 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector

Revisions List
EN25S40A
Revision No Description
Date
Preliminary 0.0 Initial Release
2012/05/03
1. Remove Unique ID Number’s related description.
Preliminary 0.1 2. Revise the typo for Table 9. Parameter ID (0) (Advanced Information) 2012/06/14
5/9 on page 50.
Preliminary 0.2
Update
54.
Page
program
time
(typ.)
from
0.7ms
to
0.35ms
on
page
1
and
2012/06/29
1. Remove the linear continuous burst in the page 1
2. Update Page program time (typ.) from 0.35ms to 0.3ms on page 1
and 54.
Preliminary 0.3
3.
Revise the
and 31.
burst
length
to
8/16/32/64
bytes
only
on
page
1,
11,
30
2012/09/26
4. Update Table 3. Protected Area Sizes Sector Organization on page
9.
5. Add Figure 5.2 Software Reset Recovery on page 13.
Preliminary 0.4 Add 8-pin 150mil VSOP package option.
2012/10/23
1. Add HOLD# function and related information.
2. Rename 32KB block erase to 32KB half block erase.
Preliminary 0.5 3. Update Enter OTP Mode (3Ah) description on page 45.
2012/11/26
4. Changing Tshsl (Tcsh): CS# High Time for Read from 7ns to 10ns on
page 55.
1. Update the description of WHDIS bit on page 8 and 19.
2. Update Set Burst (C0h) description and add Figure 19. Set Burst
Instruction Sequence Diagram on page 31.
3. Add Figure 20. Read Burst Instruction Sequence Diagram on page
Preliminary 0.6
32.
4. Update Table 14. DC Characteristics on page 54.
2013/01/03
5. Update t_PP typo from 0.35ms to 0.3ms (typ.) on page 55.
6. Update Table 17. DATA RETENTION and ENDURANCE on page
58.
1. Update Table 4B. Instruction Set (Read Instruction) on page 12.
2. Update Figure 20. Read Burst Instruction Sequence Diagram and
Preliminary 0.6A
Figure 20.1 Read
on page 32.
Burst
Instruction
Sequence
Diagram
in
QPI
mode
2013/01/09
3. Update Ordering Information “ P = RoHS, Halogen-Free and
REACH compliant “ on page 63.
1. Update typical active current from 12mA to 5mA on page 1.
Preliminary 0.7
2. Update the OTP sector size from 256-byte to 512-byte.
3.
Add Quad Input Page Program (32h) command
description and figure on page 11 and 35.
and
its
related
2013/03/18
4. Update Figure 20. Read Burst Instruction Sequence Diagram on
page 32.
1. Update Table 14. Characteristics on page on page 57.
(1) Correct the typo of ILI and ILO => ± 2µA (max.)
(2) Update ICC3 (READ) at 104MHz in Fast Read from 10/15 mA to
6/12 mA (typ.)/(max.).
(3) Update ICC3 (READ) at 33MHz in Fast Read from 5 mA to
4 mA (typ.).
A
(4) Update ICC3 (READ) at 104MHz in Quad Read from 12/20 mA ^2013/12/30
to 9/18 mA (typ.)/(max.).
(5) Update ICC3 (READ) at 33MHz in Quad Read from 8/15 mA to
6/12 mA (typ.)/(max.).
(6) Update ICC4 (PP) from 15/22 mA to 20/30 mA (typ.)/(max.).
(7) Update ICC5 (WRSR) from 1/15 mA to 4/8 mA (typ. / max).
This Data Sheet may be revised by subsequent versions
67
or modifications due to changes in technical specifications.
©2013 Eon Silicon Solution, Inc.,
Rev. A, Issue Date: 2013/12/30
www.eonssi.com