EN25S40A Datasheet, PDF (52/68 Pages) Eon Silicon Solution Inc. – 4 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector

Table 12. Parameter ID (0) (Advanced Information) 1/9
Description
Address (h) Address
(Byte Mode) (Bit)
Block / Sector Erase sizes
00
Identifies the erase granularity for all Flash
Components
01
Write Granularity
Write Enable Instruction Required for
Writing to Volatile Status Register
02
30h
03
Write Enable Opcode Select for Writing to
Volatile Status Register
04
05
Unused
06
07
08
09
10
4 Kilo-Byte Erase Opcode
11
31h
12
13
14
15
Supports (1-1-2) Fast Read
Device supports single input opcode & address
16
and dual output data Fast Read
17
Address Byte
Number of bytes used in addressing for flash arra
write and erase.
18
Supports Double Transfer Rate (DTR)
Clocking
Indicates the device supports some type of
32h
19
double transfer rate clocking.
Supports (1-2-2) Fast Read
Device supports single input opcode, dual input
20
address, and dual output data Fast Read
Supports (1-4-4) Fast Read
Device supports single input opcode, quad input
21
address, and quad output data Fast Read
Supports (1-1-4) Fast Read
Device supports single input opcode & address
22
and quad output data Fast Read
Unused
23
24
25
26
Unused
33h
27
28
29
30
31
EN25S40A
Data
01b
1b
00b
Comment
00 = reserved
01 = 4KB erase
10 = reserved
11 = 64KB erase
0 = No, 1 = Yes
00 = N/A
01 = use 50h opcode
11 = use 06h opcode
111b
Reserved
20h
4 KB Erase Support
(FFh = not supported)
1b
0 = not supported
1 = supported
00 = 3-Byte
01 = 3- or 4-Byte (e.g.
defaults to 3-Byte
00b
mode; enters 4-Byte
mode on command)
10 = 4-Byte
11 = reserved
0b
0 = not supported
1 = supported
1b
0 = not supported
1 = supported
1b
0 = not supported
1 = supported
0b
0 = not supported
1 = supported
1b
Reserved
FFh
Reserved
This Data Sheet may be revised by subsequent versions
52
or modifications due to changes in technical specifications.
©2013 Eon Silicon Solution, Inc.,
Rev. A, Issue Date: 2013/12/30
www.eonssi.com