EN29F010 Datasheet, PDF (30/35 Pages) Eon Silicon Solution Inc. – 1 Megabit (128K x 8-bit) 5V Flash Memory

SWITCHING WAVEFORMS (continued)
EN29F010
Figure 10. Alternate /CE Controlled Write Operation Timings
Notes:
1. PA is address of the memory location to be programmed.
2. PD is data to be programmed at byte address.
3. /DQ7 is the output of the complement of the data written to the device.
4. D_OUT is the output of data written to the device.
5. Figure indicates last two bus cycles of four bus cycle sequence.
This Data Sheet may be revised by subsequent versions ₃₀ ©2003 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. A, Issue Date: 2003/10/20