EN29F010 Datasheet, PDF (25/35 Pages) Eon Silicon Solution Inc. – 1 Megabit (128K x 8-bit) 5V Flash Memory

EN29F010
Table 11. ERASE AND PROGRAMMING PERFORMANCE
Parameter
Sector Erase Time
Chip Erase Time
Byte Programming Time
Chip Programming Time
Erase/Program Endurance
Typ
0.3
3
7
1
100K
Limits
Max
5
35
200
2.5
Unit
sec
sec
µs
sec
cycles
Comments
Excludes 00H programming prior to
erasure
Excludes system level overhead
Minimum 100K cycles guaranteed
Table 12. LATCH UP CHARACTERISTICS
Parameter Description
Input voltage with respect to Vss on all pins except I/O pins
(including A9 and OE )
Input voltage with respect to Vss on all I/O Pins
Vcc Current
Min
-1.0 V
-1.0 V
-100 mA
Max
12.0 V
Vcc + 1.0 V
100 mA
Note : These are latch up characteristics and the device should never be put under
these conditions. Refer to Absolute Maximum ratings for the actual operating limits.
Table 13. 32-PIN PLCC PIN CAPACITANCE @ 25°C, 1.0MHz
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C_IN
Input Capacitance
V_IN = 0
4
6
pF
C_OUT
Output Capacitance
V_OUT = 0
8
12
pF
C_IN2
Control Pin Capacitance
V_IN = 0
8
12
pF
Table 14. 32-PIN TSOP PIN CAPACITANCE @ 25°C, 1.0MHz
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C_IN
Input Capacitance
V_IN = 0
6
7.5
pF
C_OUT
Output Capacitance
V_OUT = 0
8.5
12
pF
C_IN2
Control Pin Capacitance
V_IN = 0
7.5
9
pF
This Data Sheet may be revised by subsequent versions ₂₅ ©2003 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. A, Issue Date: 2003/10/20