EN29F010 Datasheet, PDF (23/35 Pages) Eon Silicon Solution Inc. – 1 Megabit (128K x 8-bit) 5V Flash Memory

EN29F010
Table 9. AC CHARACTERISTICS
Write (Erase/Program) Operations
Parameter
Symbols
JEDEC Standard
t_AVAV
t_WC
Description
Write Cycle Time
Speed Options
-45
-55
-70
-90
Unit
Min
45
55
70
90
ns
t_AVWL
t_AS
Address Setup Time
Min
0
0
0
0
ns
t_WLAX
t_AH
Address Hold Time
Min
35
45
45
45
ns
t_DVWH
t_DS
Data Setup Time
Min
20
25
30
45
ns
t_WHDX
t_DH
Data Hold Time
Min
0
0
0
0
ns
t_OES
Output Enable Setup Time
Min
0
0
0
0
ns
t_OEH
Output Enable
Hold Time
Read
Toggle and
DATA Polling
MIn
Min
0
10
0
10
0
10
0
10
ns
ns
t_GHWL
t_GHWL
Read Recovery Time before
Write ( OE High to W E Low)
Min
0
0
0
0
ns
t_ELWL
t_CS
CE SetupTime
Min
0
0
0
0
ns
t_WHEH
t_CH
CE Hold Time
Min
0
0
0
0
ns
t_WLWH
t_WP
Write Pulse Width
Min
25
30
35
45
ns
t_WHDL
t_WPH
Write Pulse Width High
Min
20
20
20
20
ns
t_WHWH1 t_WHWH1
Programming Operation
Typ
7
7
7
7
µs
Max 200 200 200
200
µs
Typ
0.3
0.3
0.3
0.3
s
t_WHWH2 t_WHWH2
Sector Erase Operation
Max
5
5
5
5
s
t_WHWH3 t_WHWH3
t_VCS
t_VIDR
Chip Erase Operation
Vcc Setup Time
Rise Time to V_ID
Typ
3
3
3
3
s
Max
35
35
35
35
s
Min
50
50
50
50
µs
Min
500 500 500
500
ns
This Data Sheet may be revised by subsequent versions ₂₃ ©2003 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. A, Issue Date: 2003/10/20