EN29F010 Datasheet, PDF (24/35 Pages) Eon Silicon Solution Inc. – 1 Megabit (128K x 8-bit) 5V Flash Memory

EN29F010
Table 10. AC CHARACTERISTICS
Write (Erase/Program) Operations
Alternate CE Controlled Writes
Parameter
Symbols
JEDEC Standard
t_AVAV
t_WC
Description
Write Cycle Time
Speed Options
-45
-55
-70
-90
Unit
Min
45
55
70
90
ns
t_AVEL
t_AS
Address Setup Time
Min
0
0
0
0
ns
t_ELAX
t_AH
Address Hold Time
Min
35
45
45
45
ns
t_DVEH
t_DS
Data Setup Time
Min
20
25
30
45
ns
t_EHDX
t_DH
Data Hold Time
Min
0
0
0
0
ns
t_OES
Output Enable Setup Time
Min
0
0
0
0
ns
Output
Read
Min
0
0
0
0
ns
t_OEH
Enable
Hold Time
Toggle and
Data Polling
Min
10
10
10
10
ns
t_GHEL
t_GHEL
Read Recovery Time before
Min
Write ( OE High to CE Low)
0
0
0
0
ns
t_WLEL
t_WS
W E SetupTime
Min
0
0
0
0
ns
t_EHWH
t_WH
W E Hold Time
Min
0
0
0
0
ns
t_ELEH
t_CP
Write Pulse Width
Min
25
30
35
45
ns
t_EHEL
t_CPH
Write Pulse Width High
Min
20
20
20
20
ns
t_{WHWH tWHWH1}
Programming Operation
Typ
7
7
7
7
µs
1
Max 200 200 200
200
µs
t_{WHWH tWHWH2}
Sector Erase Operation
Typ
0.3
0.3
0.3
0.3
s
2
Max
5
5
5
5
s
t_WHWH
3
t_WHWH3
t_VCS
t_VIDR
Chip Erase Operation
Vcc Setup Time
Rise Time to V_ID
Typ
3
3
3
3
s
Max
35
35
35
35
s
Min
50
50
50
50
µs
Min
500 500 500
500
ns
This Data Sheet may be revised by subsequent versions ₂₄ ©2003 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. A, Issue Date: 2003/10/20