EN29F002A Datasheet, PDF (24/35 Pages) Eon Silicon Solution Inc. – 2 Megabit (256K x 8-bit) Flash Memory

Table 10. AC CHARACTERISTICS
Write (Erase/Program) Operations
Alternate CE Controlled Writes
Parameter
Symbols
JEDEC Standard
t_AVAV
t_WC
Description
Write Cycle Time
t_AVEL
t_AS
Address Setup Time
t_ELAX
t_AH
Address Hold Time
t_DVEH t_DS
Data Setup Time
t_EHDX t_DH
Data Hold Time
t_OES
Output Enable Setup Time
t_OEH
t_GHEL
t_GHEL
t_WLEL
t_EHWH
t_ELEH
t_EHEL
t_WHWH1
t_WS
t_WH
t_CP
t_CPH
t_WHWH1
Output Enable Read
Hold Time
Toggle and
Data Polling
Read Recovery Time before
Write ( OE High to CE Low)
W E SetupTime
W E Hold Time
Write Pulse Width
Write Pulse Width High
Programming Operation
t_WHWH2 t_{WHWH2 Sector Erase Operation}
t_WHWH3 t_{WHWH3 Chip Erase Operation}
t_VCS
t_VIDR
t_RP
t_RSP
Vcc Setup Time
Rise Time to V_ID
RESET Pulse Width
(n/a for EN29F002AN)
RESET Setup Time
(n/a for EN29F002AN)
EN29F002A / EN29F002AN
Min
Min
Min
Min
Min
Min
0
10
Min
Min
Min
Min
Min
Typ
Max
Typ
Max
Typ
Max
Min
Min
Min
Speed Options
-45 -55 -70
-90
45
55
70
90
Unit
ns
0
0
0
0
ns
35
45
45
45
ns
20
25
30
45
ns
0
0
0
0
ns
0
0
0
0
ns
0
0
0
0
ns
10
10
10
10
ns
0
0
0
0
ns
0
0
0
0
ns
0
0
0
0
ns
25
30
35
45
ns
20
20
20
20
ns
7
7
7
7
µs
200 200 200
200
µs
0.3
0.3
0.3
0.3
s
5
5
5
5
s
3
3
3
3
s
35
35
35
35
s
50
50
50
50
µs
500 500 500
500
ns
500 500 500
500
ns
Min
4
4
4
4
µs
This Data Sheet may be revised by subsequent versions ₂₄ ©2003 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. A, Issue Date: 2003/03/26