EN29F002A Datasheet, PDF (21/35 Pages) Eon Silicon Solution Inc. – 2 Megabit (256K x 8-bit) Flash Memory

EN29F002A / EN29F002AN
Table 7. DC Characteristics
(T_a = 0°C to 70°C or - 40°C to 85°C; V_CC = 5.0V ± 10%)
Symbol
I_LI
I_LO
I_CC1
Parameter
Input Leakage Current
Output Leakage Current
Supply Current (read) TTL Byte
I_CC2
I_CC3
I_CC4
Supply Current (Standby) TTL
Supply Current (Standby) CMOS⁽¹⁾
Supply Current (Program or Erase)
V_IL
V_IH
V_OL
V_OH
V_ID
I_LIT
V_LKO
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage TTL
Output High Voltage CMOS
A9 Voltage (Electronic Signature)
and RESET# Voltage (Temporary
Sector Unprotect)
A9 and RESET# Current (Electronic
Signature)
Supply voltage (Erase and
Program lock-out)
Test Conditions
0V≤ V_IN ≤ Vcc
0V≤ V_OUT ≤ Vcc
CE# = V_IL; OE# = V_IH;
f = 6MHz
CE# = V_IH
RESET# = CE# = Vcc ± 0.2V
CE# = V_IL; OE# = V_IH;
Byte program, Sector or Chip
Erase in progress
I_OL = 2 mA
I_OH = -2.5 mA
I_OH = -100 µA
Min
-0.5
2
2.4
Vcc - 0.4V
10.5
Max
Unit
±5
µA
±5
µA
30
mA
1.0
mA
5.0
µA
30
mA
0.8
V
Vcc ± 0.5 V
0.45
V
V
V
11.5
V
A9, RESET# = V_ID
100
µA
3.2
4.2
V
Notes:
(1) RESET# pin input buffer is always enabled so that it draws power if not at full CMOS supply voltages
This Data Sheet may be revised by subsequent versions ₂₁ ©2003 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. A, Issue Date: 2003/03/26