EN29F002A Datasheet, PDF (23/35 Pages) Eon Silicon Solution Inc. – 2 Megabit (256K x 8-bit) Flash Memory

Table 9. AC CHARACTERISTICS
Write (Erase/Program) Operations
EN29F002A / EN29F002AN
Parameter
Symbols
JEDEC Standard
Description
t_AVAV
t_WC
Write Cycle Time
Min
t_AVWL t_AS
Address Setup Time
Min
t_WLAX t_AH
Address Hold Time
Min
t_DVWH t_DS
Data Setup Time
Min
t_WHDX t_DH
Data Hold Time
Min
t_OES
Output Enable Setup Time
Min
t_OEH
t_GHWL t_GHWL
t_ELWL
t_WHEH
t_WLWH
t_WHDL
t_WHWH1
t_CS
t_CH
t_WP
t_WPH
t_WHWH1
MIn
Output Enable Read
Hold Time
Toggle and
Min
DATA Polling
Read Recovery Time before
Min
Write ( OE High to W E Low)
CE SetupTime
Min
CE Hold Time
Min
Min
Write Pulse Width
Write Pulse Width High
Min
Typ
Programming Operation
Max
t_WHWH2 t_{WHWH2 Sector Erase Operation}
Typ
Max
t_WHWH3 t_{WHWH3 Chip Erase Operation}
Typ
Max
t_VCS
Vcc Setup Time
Min
t_VIDR
Rise Time to V_ID
Min
t_RP
RESET Pulse Width
Min
(n/a for EN29F002AN)
t_RSP
RESET Setup Time
Min
(n/a for EN29F002AN)
Speed Options
-45 -55 -70
-90
45
55
70
90
0
0
0
0
35
45
45
45
20
25
30
45
0
0
0
0
0
0
0
0
0
0
0
0
10
10
10
10
0
0
0
0
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
0
0
0
0
ns
0
0
0
0
ns
25
30
35
45
ns
20
20
20
20
ns
7
7
7
7
µs
200 200 200
200
µs
0.3
0.3
0.3
0.3
s
5
5
5
5
s
3
3
3
3
s
35
35
35
35
s
50
50
50
50
µs
500 500 500
500
ns
500 500 500
500
ns
4
4
4
4
µs
This Data Sheet may be revised by subsequent versions ₂₃ ©2003 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. A, Issue Date: 2003/03/26