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EN25B64 Datasheet, PDF (15/37 Pages) Eon Silicon Solution Inc. – 64 Megabit Serial Flash Memory with Boot and Parameter Sectors
Table 4. Instruction Set
EN25B64
Instruction Name
Write Enable
Write Disable
Read Status
Register
Write Status
Register
Read Data
Fast Read
Page Program
Sector Erase
Bulk Erase
Deep Power-down
Release from Deep
Power-down, and
read Device ID
Release from Deep
Power-down
Manufacturer/
Device ID
Read Identification
Enter OTP mode
Byte 1
Code
06h
04h
05h
01h
03h
0Bh
02h
D8h
C7h
B9h
ABh
90h
9Fh
3Ah
Byte 2
Byte 3
Byte 4 Byte 5 Byte 6
(S7-S0)(1)
S7-S0
A23-A16
A23-A16
A15-A8
A15-A8
A23-A16
A23-A16
A15-A8
A15-A8
A7-A0
A7-A0
A7-A0
A7-A0
(D7-D0)
dummy
D7-D0
(Next byte)
(D7-D0)
Next byte
dummy
dummy dummy (ID7-ID0)
dummy
(M7-M0)
dummy
(ID15-ID8)
00h(5) (M7-M0)
(ID7-ID0)
(ID7-ID0)
n-Bytes
Continuous
(2)
continuous
(Next Byte)
continuous
continuous
(4)
Notes:
1. Data bytes are shifted with Most Significant Bit first. Byte fields with data in parenthesis “( )” indicate data being read from
the device on the DO pin.
2. The Status Register contents will repeat continuously until CS# terminate the instruction.
3. All sectors may use any address within the sector.
4. The Device ID will repeat continuously until CS# terminate the instruction.
5. The Manufacturer ID and Device ID bytes will repeat continuously until CS# terminate the instruction.
00h on Byte 4 starts with MID and alternate with DID, 01h on Byte 4 starts with DID and alternate with MID.
This Data Sheet may be revised by subsequent versions 15 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. C, Issue Date: 2008/06/23