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EN25Q64 Datasheet, PDF (1/60 Pages) Eon Silicon Solution Inc. – 64 Megabit Serial Flash Memory with 4Kbyte Uniform Sector
EN25Q64
EN25Q64
64 Megabit Serial Flash Memory with 4Kbyte Uniform Sector
FEATURES
• Single power supply operation
- Full voltage range: 2.7-3.6 volt
• Serial Interface Architecture
- SPI Compatible: Mode 0 and Mode 3
• 64 M-bit Serial Flash
- 64 M-bit/8192 K-byte/32768 pages
- 256 bytes per programmable page
• Standard, Dual or Quad SPI
- Standard SPI: CLK, CS#, DI, DO, WP#
- Dual SPI: CLK, CS#, DQ0, DQ1, WP#
- Quad SPI: CLK, CS#, DQ0, DQ1, DQ2, DQ3
• High performance
- 104MHz clock rate for one data bit
- 50MHz clock rate for two data bits
- 50MHz clock rate for four data bits
• Low power consumption
- 12 mA typical active current
- 1 μA typical power down current
• Uniform Sector Architecture:
- 2048 sectors of 4-Kbyte
- 128 blocks of 64-Kbyte
- Any sector or block can be erased individually
• Software and Hardware Write Protection:
- Write Protect all or portion of memory via
software
- Enable/Disable protection with WP# pin
• High performance program/erase speed
- Page program time: 1.3ms typical
- Sector erase time: 90ms typical
- Block erase time 500ms typical
- Chip erase time: 30 seconds typical
• Write Suspend and Write Resume
• Lockable 512 byte OTP security sector
• Minimum 100K endurance cycle
• Package Options
- 8 pins SOP 200mil body width
- 8 contact VDFN (5x6mm)
- 8 contact VDFN (6x8mm)
- 16 pins SOP 300mil body width
- All Pb-free packages are RoHS compliant
• Industrial temperature Range
GENERAL DESCRIPTION
The EN25Q64 is a 64 Megabit (8192K-byte) Serial Flash memory, with advanced write protection
mechanisms. The EN25Q64 supports the standard Serial Peripheral Interface (SPI), and a high
performance Dual output as well as Quad I/O using SPI pins: Serial Clock, Chip Select, Serial DQ0(DI),
DQ1(DO), DQ2(WP#) and DQ3(NC). SPI clock frequencies of up to 50MHz are supported allowing
equivalent clock rates of 100MHz for Dual Output and 200MHz for Quad Output when using the
Dual/Quad Output Fast Read instructions. The memory can be programmed 1 to 256 bytes at a time,
using the Page Program instruction.
The EN25Q64 is designed to allow either single Sector/Block at a time or full chip erase operation. The
EN25Q64 can be configured to protect part of the memory as the software protected mode. The device
can sustain a minimum of 100K program/erase cycles on each sector or block.
This Data Sheet may be revised by subsequent versions
1
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. E, Issue Date: 2009/10/19
www.eonssi.com