EMLS232TA Datasheet, PDF (7/14 Pages) Emerging Memory & Logic Solutions Inc – 512K x 32 x 4Banks Low Power SDRAM Specificaton

EMLS232TA Series
512K x 32 x 4Banks Low Power SDRAM
DC CHARACTERISRICS
Recommended operating conditions (Voltage referenced to V_SS = 0V, T_A = 0^oC~ 70^oC for Extended, -25^oC~ 85^oC for Commercial)
Parameter
Symbol
Test Condition
Version
133MHz
Unit
Note
Operating Current
(One Bank Active)
I_CC1
Active mode; Burst length = 2; Read or Write;
t_RC  t_RC(min); CL=3; t_CC=10 ¨
I_O= 0 
90
1

Precharge Standby Cur-
rent in power-down
mode
I_CC2P
I_CC2PS
CKE
§
V_IL(max), t_CC=10 ¨
CKE & CLK
§
V_IL(max), t_CC = 
0.5

0.5
Precharge Standby Cur-
rent in non power-down
mode
I_CC2N
I_CC2NS
CKE

V_IH(min), CS 
V_IH(min), t_CC = 10 ¨
Input signals are changed one time during 20
¨
CKE

V_IH(min), CLK §
V_IL(max), t_CC = 
Input signals are stable
20

10
Active Standby Current
in power-down mode
I_CC3P
I_CC3PS
CKE
§
V_IL(max),
t_CC
=
10
¨
CKE & CLK
§
V_IL(max), t_CC = 
5

3
Active Standby Current
in non power-down
mode (One Bank Active)
I_CC3N
I_CC3NS
CKE

V_IH(min), CS 
V_IH(min),
t_CC
=
10
¨
Input signals are changed one time during 20
¨
CKE

V_IH(min), CLK §
V_IL(max), t_CC = 
Input signals are stable
30

25

Operating Current
(Burst Mode)
I_CC4
I_O
=
0

Page burst, CL=3, Read or Write, t_CC = 10 ¨
4Banks Activated
110
1

Refresh Current
I_CC5
t_ARFC 
t_ARFC(min),
t_CC
=
10
¨
110
2

Internal Auto
TCSR
Max Max Max Max
15
45
70
85

Self Refresh Current
I_CC6
CKE 0.2V
§
Full Array
TBD TBD TBD 250
1/2 of Full Array
TBD TBD TBD 190

1/4 of Full Array TBD TBD TBD 150
Deep Power Down
mode current
I_CC7
10

NOTE :
1.Measured with outputs open.
2.Refresh period is 64 .

3.Unless otherwise noted, input swing level is CMOS(V_IH/V_IL=V_DDQ/V_SSQ).
Rev 0.3