EMLS232TA Datasheet, PDF (2/14 Pages) Emerging Memory & Logic Solutions Inc – 512K x 32 x 4Banks Low Power SDRAM Specificaton

EMLS232TA Series
512K x 32 x 4Banks Low Power SDRAM
512K x 32Bit x 4 Banks Low Power SDRAM
FEATURES
GENERAL DESCRIPTION
2.8V power supply.
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The EMLS232TA series is 67,108,864 bits synchronous high data
LVCMOS compatible with multiplexed address.
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rate Dynamic RAM organized as 4 x 534,288 words by 32 bits,
Four banks operation.
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fabricated with Ramsway’s high performance CMOS technology.
MRS cycle with address key programs.
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-. CAS latency (1, 2 & 3).
-. Burst length(1, 2, 4, 8 & Full page).
-. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
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Synchronous design allows precise cycle control with the use of
system clock and I/O transactions are possible on every clock
cycle. Range of operating frequencies, programmable burst
lengths and programmable latencies allow the same device to be
useful for a variety of high bandwidth and high performance mem-
ory system applications.
All inputs are sampled at the positive going edge of the system
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clock.
Burst read single-bit write operation.
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Special Function Support.
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. PASR(Partial Array Self Refresh).
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. Internal auto TCSR (Temperature Compensated Self Refresh)
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. DS (Driver Strength)
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. Deep power down
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DQM for masking.
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Auto refresh.
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64 refresh period (4K cycle).
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Commercial Temperature Operation (-0 ~ 70 )
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Extended Temperature Operation (-25 ~ 85 )
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ORDERING INFORMATION
Part No.
Max Freq.
EMLS232TAW-6(E)
133 (CL3), 100 (CL2)
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Interface
LVCMOS
Package
Wafer Biz.
NOTE :
1. In case of 40 Frequency, CL1 can be supported.
2. Ramsway are not designed or manufactured for use in a device or system that is used under circumstance in which human life is
potentially at stake. Please contact to the memory marketing team in ramsway when considering the use of a product
contained herein for any specific purpose, such as medical,aerospace, nuclear, military, vehicular or undersea repeater use.
Rev 0.3