HB52RF328GB-B Datasheet, PDF (9/16 Pages) Elpida Memory – 256MB Unbuffered SDRAM Micro DIMM

HB52RF328GB-B, HB52RD328GB-B
DC Characteristics 1 (TA = 0 to 65°C, VCC = 3.3V ± 0.3V, VSS = 0V)
Parameter
Symbol Grade
Max.
Unit
Test conditions
Notes
Operating current
(CL = 2)
(CL = 3)
Standby current in power down
Standby current in power down
(input signal stable)
Standby current in non power down
-75
ICC1
-A6
-B6
-75
ICC1
-A6
-B6
ICC2P
ICC2PS
ICC2N
Active standby current in power down ICC3P
Active standby current in non power
down
Burst operating current
(CL = 2)
(CL = 3)
ICC3N
-75
ICC4
-A6
-B6
-75
ICC4
-A6
-B6
880
760
600
880
760
760
24
16
160
32
240
800
800
600
1080
800
800
mA
Burst length = 1
tRC = min.
1, 2, 3
mA
mA
CKE0 = VIL,
tCK = 12ns
6
mA
CKE0 = VIL, tCK = ∞ 7
mA
CKE0, /S = VIH,
tCK = 12ns
mA
CKE0, /S = VIH,
tCK = 12ns
mA
CKE0, /S = VIH,
tCK = 12ns
4
1, 2, 6
1, 2, 4
mA
tCK = min., BL = 4 1, 2, 5
mA
Refresh current
ICC5
1760
mA
tRC = min.
3
Self refresh current
Self refresh current
(L-version)
ICC6
ICC6
24
mA
VIH ≥ VCC – 0.2V
VIL ≤ 0.2V
8
16
mA
Notes: 1. ICC depends on output load condition when the device is selected. ICC (max.) is specified at the output
open condition.
2. One bank operation.
3. Input signals are changed once per one clock.
4. Input signals are changed once per two clocks.
5. Input signals are changed once per four clocks.
6. After power down mode, CK0/CK1 operating current.
7. After power down mode, no CK0/CK1 operating current.
8. After self refresh mode set, self refresh current.
DC Characteristics 2 (TA = 0 to 65°C, VCC = 3.3V ± 0.3V, VSS = 0V)
Parameter
Input leakage current
Output leakage current
Output high voltage
Output low voltage
Symbol Grade min.
ILI
–10
ILO
–10
VOH
2.4
VOL
—
Max.
10
10
—
0.4
Unit
Test conditions
Notes
µA
0 ≤ Vin ≤ VCC
µA
0 ≤ Vout ≤ VCC
DQ = disable
V
IOH = –4 mA
V
IOL = 4 mA
Preliminary Data Sheet E0202H10 (Ver. 1.0)
9