HB52RF328GB-B Datasheet, PDF (11/16 Pages) Elpida Memory – 256MB Unbuffered SDRAM Micro DIMM

HB52RF328GB-B, HB52RD328GB-B
Notes: 1. AC measurement assumes tT = 1ns. Reference level for timing of input signals is 1.5V.
2. Access time is measured at 1.5V. Load condition is CL = 50pF.
3. tLZ (min.) defines the time at which the outputs achieves the low impedance state.
4. tHZ (max.) defines the time at which the outputs achieves the high impedance state.
5. tCES defines CKE setup time to CK rising edge except power down exit command.
Test Conditions
• Input and output timing reference levels: 1.5V
• Input waveform and output load: See following figures
input
2.4V
2.0V
0.4V ^0.8V
I/O
CL
tT
tT
Input waveform and output load
Preliminary Data Sheet E0202H10 (Ver. 1.0)
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