HB52RF328GB-B Datasheet, PDF (1/16 Pages) Elpida Memory – 256MB Unbuffered SDRAM Micro DIMM

PRELIMINARY DATA SHEET
256MB Unbuffered SDRAM Micro DIMM
HB52RF328GB-B (32M words × 64 bits, 1 bank)
HB52RD328GB-B (32M words × 64 bits, 1 bank)
Description
The HB52RF328GB and HB52RD328GB are a 32M ×
64 × 1 banks Synchronous Dynamic RAM Micro Dual
In-line Memory Module (Micro DIMM), mounted 8
pieces of 256M bits SDRAM (HM522805BTB/BLTB)
sealed in TCP package and 1 piece of serial EEPROM
(2k bits EEPROM) for Presence Detect (PD). An
outline of the products is 144-pin Zig Zag Dual tabs
socket type compact and thin package. Therefore,
they make high density mounting possible without
surface mount technology. They provide common data
inputs and outputs. Decoupling capacitors are
mounted beside TCP on the module board.
Note: Do not push the cover or drop the modules in
order to protect from mechanical defects, which
would be electrical defects.
Features
• 144-pin Zig Zag Dual tabs socket type (dual lead out)
 Outline: 38.00mm (Length) × 30.00mm (Height) ×
3.80mm (Thickness)
 Lead pitch: 0.50mm
• 3.3V power supply
• Clock frequency: 133MHz/100MHz (max.)
• LVTTL interface
• Data bus width: × 64 Non parity
• Single pulsed /RAS
• 4 Banks can operates simultaneously and
independently
• Burst read/write operation and burst read/single write
operation capability
• Programmable burst length (BL): 1, 2, 4, 8
• 2 variations of burst sequence
 Sequential
 Interleave
• Programmable /CE latency (CL): 2, 3
• Byte control by DQMB
• Refresh cycles: 8192 refresh cycles/64ms
• 2 variations of refresh
 Auto refresh
 Self refresh
• Low self refresh current : HB52RF328GB-xxBL
: HB52RD328GB-xxBL
Document No. E0202H10 (Ver. 1.0)
Date Published August 2001 (K) _{This product became EOL in September, 2002.}
Printed in Japan
URL: http://www.elpida.com
C Elpida Memory, Inc. 2001
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.