HB54R5128KN-A75B Datasheet, PDF (11/16 Pages) Elpida Memory – 512MB DDR SDRAM SO DIMM

HB54R5128KN-A75B/B75B/10B
Electrical Specifications
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Note
Voltage on any pin relative to VSS
VT
–1.0 to +4.6
V
1
Supply voltage relative to VSS
VCC, VCCQ
–1.0 to +4.6
V
1
Short circuit output current
Power dissipation
Operating temperature
Storage temperature
Notes: 1. Respect to VSS.
IOUT
PT
Topr
Tstg
E_{DC Operating Conditions (TA = 0 to +65°C)}
Parameter
Supply voltage
O_{Input reference voltage}
Termination voltage
L ^{DC Input high voltage}
Symbol
VCC, VCCQ
VSS
VREF
VTT
VIH
50
8
0 to +65
–50 to +100
min.
2.3
0
1.15
VREF – 0.04
VREF + 0.18
Typ
2.5
0
1.25
VREF
—
mA
W
°C
°C
max.
Unit
2.7
V
0
V
1.35
V
VREF + 0.04 V
VCCQ + 0.3 V
Notes
1, 2
1
1
1, 3
DC Input low voltage
VIL
–0.3
—
VREF – 0.18 V
1, 4
DC Input signal voltage
VIN (dc)
–0.3
—
VCCQ + 0.3 V
5
DC differential input voltage
VSWING (dc) 0.36
—
VCCQ + 0.6 V
6
Ambient illuminance
—
—
—
100
lx
Notes: 1. All parameters are referred to VSS, when measured.
P _{2. VCCQ must be lower than or equal to VCC.}
3. VIH is allowed to exceed VCC up to 4.6V for the period shorter than or equal to 5ns.
4. VIL is allowed to outreach below VSS down to –1.0V for the period shorter than or equal to 5ns.
5. VIN (dc) specifies the allowable dc execution of each differential input.
roduct _{6. VSWING (dc) specifies the input differential voltage required for switching.}
Data Sheet E0189H40 (Ver. 4.0)
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