E522.31_16 Datasheet, PDF (7/20 Pages) ELMOS Semiconductor AG – CHANNEL SWITCHED MODE CONSTANT CURRENT CONTROLLER

1 CHANNEL SWITCHED MODE CONSTANT CURRENT CONTROLLER
PRODUCTION DATA - JUL 21, 2016
E522.31/33
3 Recommended Operating Conditions
Parameters are guaranteed within the range of recommended operating conditions unless otherwise specified.
All voltages are referred to ground (0V). Typical Parameters are given for V_VIN= 14V and T_J = +25 °C.
Currents flowing into the circuit have positive values.
The first electrical potential connected to the IC must be GND to avoid excessive current flow in other pins.
Description
Supply voltage VIN
Voltage at pin FBL
Condition
Symbol
V_IN
V_FBL
Voltage at pin FBH
V_FBH
Voltage at pin OVPIN
Voltage at pin OVPO
Resistance from OVPO to GND
External Reference at pin ADIM
Voltage at pin ADIM for internal
Reference Voltage
V_OVPIN
V_OVPO
R_OVPO
V_ADIM,EXREF
V_ADIM,INTREF
Voltage at Dimming Inputs PW-
DIM
V_PWDIM
RT Current to define fOSC
Resistance from RT to GND
Voltage at pin ON
Resistor to supply DRVS using VSM
Sink impedance of external open
drain at PWDIM
I_RT
R_RT
V_ON
R_VSM,DRVS
Z_PWDIM
Average Output Current at pin
CGATE
SMPS Frequency
x ext. Gatecharge
driven
I_CGATE
Average Output Current at pin
LGATE
Dimming Frequency x
Gatecharge at LGATE
I_LGATE
Input Current at pin ERRB
External Synchronization Frequen-
cy applied to pin OSCIN
I_ERRB
f_OSCIN
Voltage at pin CSP
Voltage at pin CSN to AGND
1)
Voltage at pin DRVS
Junction temperature
Ambient temperature
Capacitance at VSM to AGND
ESR < 0.6Ω
Capacitance at pin VIN to GND ESR < 0.1Ω
Capacitance from pin V3V3 to AGND ESR < 0.6Ω
Capacitance from DRVS to PGND
ESR < 0.1Ω
ESL < 5 nH
V_CSP
V_CSN
V_DRVS
T_J
T_A
C_VSM
C_VIN
C_V3V3
C_DRVS
Maximum Total Capacitance at
pins OVPIN and OVPO
C_OVP
PGND to AGND
1)
V_PGND
1) Pins must be soldered to PCB GND potential
Min
5.5
4
V_FBL
10
0.24
0V.^V2³5^V3-
0
-24
50
0
1
0
225
0
4.75
-40
-40
0.8
47
0.8
1
Typ
14
V20_FB0L+m
20
V_V3V3
Max
55
56
V40_FB0L+m
80
3
33
2.4
V_VSM
-10
120
55
3
2
Unit
V
V
V
V
V
kΩ
V
V
V
µA
kΩ
V
Ω
kΩ
25
mA
2
mA
3
mA
650
kHz
400
mV
0
mV
V_VSM
7.5
V
+150 °C
+125 °C
1
2
µF
120
µF
1
2
µF
2.2
µF
20
pF
0
V
Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Elmos Semiconductor AG
Data Sheet
QM-No.: 25DS0085E.01
7/20