E522.31_16 Datasheet, PDF (11/20 Pages) ELMOS Semiconductor AG – CHANNEL SWITCHED MODE CONSTANT CURRENT CONTROLLER

1 CHANNEL SWITCHED MODE CONSTANT CURRENT CONTROLLER
PRODUCTION DATA - JUL 21, 2016
E522.31/33
Electrical Characteristics (continued)
(V_VIN = +5.5V to +55V, T_AMB = -40°C to +125°C, unless otherwise noted. Typical values are at V_VIN = +14V and T_AMB =
+25°C. Positive currents flow into the device pins.)
Description
Outer Regulation Loop
Transconductance differential
Voltage V_FBH-FBL to CMP
Openloop
CMP
DC
Gain
from
V_FBH-FBL
to
Maximum Input / Output Current
at CMP
Leakage Current at CMP during
Dimming
Under-voltage protection at CMP
Over-Voltage Protection
Input Voltage at OVPIN pin
Input voltage at OVPO pin
Over-Voltage Protection Threshold
Sleep / Dimming Leakage Current
at OVPIN
Active Current Flow into OVPIN
Over-Voltage Detection Delay
ERRB Output
Output Voltage of active ERRB
ERRB Leakage Current
Minimum ERRB Low Pulse Width
Condition
T_J = 25°C
3)
T_J = 25°C
V_CMP = 1.5V
V_PWDIM = 0V
T_J ≤ 85°C
V_CMP = 1.5V ³⁾
1)
V_OVPIN = 5 ... 80V,
T_J = 25°C
V_ON=0V or V_PWDIM=0
I_ACTIVE,OVPIN = V_OUT/
(R_OVPIN+R_OVPO) ²⁾
PWDIM = '1'
ON = '1' ³⁾
I_ERRB = 3mA
Error detected
T_J < 150°C
No Error detected
Error detected
Symbol Min
GM
A_DC
I_CMP,MAX
I_CMP,LEAK
V_OVERDR,CMP
V_OVPIN
V_OVPO
V_OVPO,OFF
I_LEAK,OVPIN
1.16
I_ACTIVE,OVPIN
t_OVP,DETECT
V_ERRB,L
I_ERRB,Z
t_ERRB,ON
0.8
1) Hysteresis is provided by internal minimum pulse width of ERRB signal of typ. 1ms
2) The parameter V_OUT describes the output voltage of the converter in a typical application
3) Not production tested
Typ Max Unit
4000
µS
85
dB
40
µA
1
30
nA
160
mV
80
V
V_V3V3
V
1.20 1.24 V
0.1
µA
130 µA
10
25
µs
200 400 mV
5
µA
1
ms
Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Elmos Semiconductor AG
Data Sheet
QM-No.: 25DS0085E.01
11/20