DG808BC45 Datasheet, PDF (9/12 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

SEMICONDUCTOR
DG808BC45
15000
14000
13000
12000
Conditions:
I_T = 3000A
Cs = 4.0uF
Tj = 125^oC
11000
10000
9000
Tj = 25^oC
8000
20
30
40
50
Rate of rise of reverse gate current dI_GQ/dt - (A/us)
1000
900
Tj = 125^oC
800
V_D = 2250V
700
600
500
400
300
200
100 V_D = 3000V
0
0.1
1
10
100
1000
Gate cathode resistance R_GK - (Ohms)
Fig.22 Turn-off charge vs rate of rise of reverse gate
current
Fig.23 Rate of rise of off-state voltage vs gate cathode
resistance
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