DG808BC45 Datasheet, PDF (7/12 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

SEMICONDUCTOR
14000
12000
10000
8000
C_S = 3 uF
C_S = 2.5 uF
C_S = 4uF
C_S = 2 uF
6000
4000
2000
0
0
Conditions :
Tj = 125 ^oC
V_DM = V_DRM
dI_GQ/dt = 40 A/us
1000
2000
3000
On-state current I_T - (A)
4000
Fig.14 Turn-off energy vs on-state current
40
Conditions:
I_T = 3000A
Cs = 4.0uF
35
30
25
Tj = 25 ^oC
20
Tj = 125 ^oC
15
20
30
40
50
Rate of rise of reverse gate current dI_GQ/dt - (A/us)
Fig.16 Gate storage time vs rate of rise of reverse gate
current
DG808BC45
30
Conditions :
Cs = 4 uF
25 ^dIGQ^{/dt = 40 A/us}
20
T_j = 125 ^oC
T_j = 25 ^oC
15
10
5
0
0
1000
2000
3000
4000
On-state current I_T - (A)
Fig.15 Gate storage time vs on-state current
2.5
Conditions:
Cs = 4.0uF
diGQ/dt = 40A/uS
2
T_j = 125 ^oC
1.5
T_j = 25 ^oC
1
0.5
0
0
1000
2000
3000
4000
On-state current I_T - (A)
Fig.17 Gate fall time vs on-state current
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