DG808BC45 Datasheet, PDF (1/12 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG808BC45
Gate Turn-off Thyristor
DS5914-1.1 January 2009 (LN26575)
FEATURES
Double Side Cooling
High Reliability In Service
High Voltage Capability
Fault Protection Without Fuses
High Surge Current Capability
Turn-off Capability Allows Reduction in
Equipment Size and Weight. Low Noise
Emission Reduces Acoustic Cladding Necessary
For Environmental Requirements
KEY PARAMETERS
I_TCM
V_DRM
I_(AV)
dV_D/dt*
dI_T/dt
3000A
4500V
780A
1000V/µs
400A/µs
APPLICATIONS
Variable speed AC motor drive inverters (VSD-
AC) including Traction drives
Uninterruptable Power Supplies
High Voltage Converters
Choppers
Welding
Induction Heating
DC/DC Converters
Outline type code: C
(See Package Details for further information)
Fig. 1 Package outline
VOLTAGE RATINGS
Type Number
DG808BC45
Repetitive Peak Off-state
Voltage VDRM (V)
4500
Repetitive Peak Reverse
Voltage VRRM (V)
16
Conditions
Tvj = 125°C, IDM =100mA,
IRRM = 50mA
CURRENT RATINGS
Symbol
ITCM
IT(AV)
IT(RMS)
Parameter
Repetitive peak controllable on-state current
Mean on-state current
RMS on-state current
Conditions
VD = 66%VDRM, Tj = 125°C,
dIGQ/dt = 40A/ s, CS = 4 F
THS = 80°C, Double side cooled.
Half sine 50Hz
THS = 80°C, Double side cooled.
Half sine 50Hz
Max.
3000
780
1225
Units
A
A
A
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