DG808BC45 Datasheet, PDF (6/12 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

SEMICONDUCTOR
DG808BC45
6
5
rise time
Conditions:
4
T_j = 125^oC; I_FGM = 40A
Cs = 4.0uF; Rs = 10 Ohms
di_T/dt = 300A/uS
3
Vd = 2000V
2
delay time
1
0
0
500 1000 1500 2000 2500 3000
On-state current I_T - (A)
Fig.10 Delay and rise time vs on-state current
10
9
8
7
6
5
4
3
2
1
0
0
rise time
Conditions:
I_T = 3000A
T_j = 125^oC
Cs = 4.0uF
Rs = 10 Ohms
di_T/dt = 300A/uS
di_FG/dt = 40A/uS
V_D = 3000V
delay time
20
40
60
80
Peak forward gate current I_FGM - (A)
Fig.11 Delay and rise time vs peak forward gate current
14000
12000
10000
Conditions:
Tj = 125^oC
Cs = 4.0uF
di_GQ/dt =
40A/uS
V_DM = 100% V_DRM
8000
6000
4000
V_DM = 75% V_DRM
V_DM = 50% V_DRM
2000
0
0
1000
2000
3000
4000
On-state current, IT - (A)
13000
12000
11000
V_DM = 100% V_DRM
10000
9000
8000
7000
Conditions:
T_j = 125^oC
Cs = 4.0uF
I_T = 3000A
V_DM = 75% V_DRM
6000
V_DM = 50% V_DRM
5000
20
30
40
50
60
Rate of rise of reverse gate current dI_GQ/dt - (A/us)
Fig.12 Turn-off energy vs on-state current
Fig.13 Turn-off energy loss vs rate of rise of reverse gate
current
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