DG808BC45 Datasheet, PDF (3/12 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

SEMICONDUCTOR
CHARACTERISTICS
Tj =125^oC unless stated otherwise
Symbol
Parameter
VTM)
IDM
IRRM
VGT
IGT
IRGM
EON
td
tr
EOFF
tgs
tgf
tgq
QGQ
QGQT
IGQM
On-state voltage
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Reverse gate cathode current
Turn-on Energy
Delay time
Rise time
Turn-off energy
Storage time
Fall time
Gate controlled turn-off time
Turn-off gate charge
Total turn-off gate charge
Peak reverse gate current
DG808BC45
Test Conditions
At 3000A peak, IG(ON) = 10A d.c.
VDRM = 4500V, VRG = 0V
VRRM = 16V
VD = 24V, IT = 100A, Tj = 25^oC
VD = 24V, IT = 100A, Tj = 25^oC
VRGM = 16V, No gate/cathode resistor
VD = 3000V
IT = 3000A, dIT/dt = 300A/µs
IFG = 40A, rise time < 1.0µs
IT = 3000A, VDM = VDRM
Snubber Cap Cs = 4.0µC
diGQ/dt = 40A/us
Min. Max. Units
-
3.75
V
-
100
mA
-
50
mA
-
1.2
V
-
3.5
A
-
10
mA
-
2860 mJ
-
2.1
µs
-
4.8
µs
-
12000 mJ
-
25
µs
2
µs
-
27
µs
12000 µC
24000 µC
-
800
A
3/12
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