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GP401DDS18 Datasheet, PDF (8/11 Pages) Dynex Semiconductor – Low VCE(SAT) Dual Switch IGBT Module Preliminary Information
GP401DDS18
900
PWM Sine Wave
Power Factor = 0.9,
800
Modulation Index =1
700
600
500
400
300
200
Conditions:
100 Tj = 125˚C, Tcase = 75˚C
Rg = 2.2Ω, VCC = 900V
0
1
10
20
fmax - (kHz)
Fig. 15 3 Phase inverter operating frequency
700
600
500
400
300
200
100
0
0
20 40 60 80 100 120 140 160
Case temperature, Tcase - (˚C)
Fig. 16 DC current rating vs case temperature
8/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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