GP401DDS18 Datasheet, PDF (7/11 Pages) Dynex Semiconductor – Low VCE(SAT) Dual Switch IGBT Module Preliminary Information

GP401DDS18
800
700
T_j = 25˚C
600
500
T_j = 125˚C
400
300
200
100
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5
Foward voltage, V_F - (V)
Fig. 10 Diode typical forward characteristics
1000
900
800
700
600
500
400
300
200
T_case = 125˚C
V_ge = ±15V
100 ^{Rg(min) = 4.3Ω}
R_g(min) : Minimum recommended value
0
0
400
800
1200
1600
Collector-emitter voltage, V_ce - (V)
2000
Fig. 12 Reverse bias safe operating area
10000
1000 ^{IC max. (single pulse)}
100
10
100
10
50µs
100µs
1
t_p = 1ms
Diode
Transistor
1
1
10
100
1000
10000
Collector-emitter voltage, V_ce - (V)
Fig. 13 Forward bias safe operating area
0.1
1
10
100
1000
Pulse width, t_p - (ms)
10000
Fig.14 Transient thermal impedance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
7/10
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