GP401DDS18 Datasheet, PDF (6/11 Pages) Dynex Semiconductor – Low VCE(SAT) Dual Switch IGBT Module Preliminary Information

GP401DDS18
200
T_case = 25ßC
A
180 ^VGE ^{= –15V}
V_CE = 900V
B
160
C
140
120
100
80
60
40
A: R_g = 4.7Ω
20
B: R_g = 3.3Ω
C: R_g = 2.2Ω
0
0 50 100 150 200 250 300 350 400
Collector current, I_C - (A)
Fig. 7 Typical turn-off energy vs collector current
300
T_case = 125˚C
275 _{VGE = ±15V}
A
250 ^{VCE = 900V}
225
B
C
200
175
150
125
100
75
50
A: R_g = 4.7Ω
25
B: R_g = 3.3Ω
C: R_g = 2.2Ω
0
0 50 100 150 200 250 300 350 400
Collector current, I_C - (A)
Fig. 8 Typical turn-off energy vs collector current
60
V_GE = ±15V
V_CE = 900V
50 ^{Rg = 2.2Ω}
40
T_case = 125˚C
30
T_case = 25˚C
20
10
0
0 50 100 150 200 250 300 350 400
Collector current, I_C - (A)
Fig. 9 Typical diode turn-off energy vs collector current
1400
1200
T_case = 125˚C
V_GE = ±15V
V_CE = 900V
R_g = 2.2Ω
1000
t_d(off)
800
600
t_d(on)
400
t_f
t_r
200
0
0 50 100 150 200 250 300 350 400
Collector current, I_C - (A)
Fig. 10 Typical switching times
6/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com