GP401DDS18 Datasheet, PDF (4/11 Pages) Dynex Semiconductor – Low VCE(SAT) Dual Switch IGBT Module Preliminary Information

GP401DDS18
ELECTRICAL CHARACTERISTICS
T_case = 25˚C unless stated otherwise
Symbol
Parameter
t
d(off)
t
f
E
OFF
t_d(on)
t_r
E_ON
Q_rr
I_rr
E_REC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
T = 125˚C unless stated otherwise
case
Symbol
Parameter
t_d(off)
t_f
E_OFF
t
d(on)
t
r
E
ON
Q_rr
I
rr
E
REC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Test Conditions
I_C = 400A
V_GE = ±15V
V_CE = 900V
R_G(ON) = R_G(OFF) = 2.2Ω
L ~ 100nH
I = 400A, V = 50% V ,
F
R
CES
dI_F/dt = 3000A/µs
Min. Typ. Max. Units
-
900 1100 ns
-
330 400 ns
-
180 250 mJ
-
500 650 ns
-
200 400 ns
-
200 230 mJ
-
80
100 µC
-
250
-
A
-
70
-
mJ
Test Conditions
I = 400A
C
V_GE = ±15V
V_CE = 900V
R
G(ON)
=
R
G(OFF)
=
2.2Ω
L ~ 100nH
I_F = 400A, V_R = 50% V_CES,
dI_F/dt = 2500A/µs
Min. Typ. Max. Units
-
1010 1200 ns
-
450 500 ns
-
250 320 mJ
-
600 800 ns
-
310 400 ns
-
200 270 mJ
-
110 150 µC
-
300
-
A
-
190
-
mJ
4/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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