GP401DDS18 Datasheet, PDF (5/11 Pages) Dynex Semiconductor – Low VCE(SAT) Dual Switch IGBT Module Preliminary Information

GP401DDS18
TYPICAL CHARACTERISTICS
800
Common emitter
700 ^{Tcase = 25˚C}
V_ge = 20/15/12/10V
600
500
400
300
200
100
0
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, V_ce - (V)
Fig. 3 Typical output characteristics
800
Common emitter
T_case = 125˚C
700
V_ge = 20/15/12/10V
600
500
400
300
200
100
0
0
1.0
2.0
3.0
4.0
5.0
6.0
Collector-emitter voltage, V_ce - (V)
Fig. 4 Typical output characteristics
400
T_case = 25˚C
360 ^VGE ^{= ±15V}
V_CE = 900V
320
280
240
A
200
B
160
C
120
80
A: R_g = 4.7Ω
40
B: R_g = 3.3Ω
C: R_g = 2.2Ω
0
0 50 100 150 200 250 300 350 400
Collector current, I_C - (A)
Fig. 5 Typical turn-on energy vs collector current
300
280
T_case = 125˚C
V_GE = ±15V
260 V_CE = 900V
240
220
A
200
B
180
160
C
140
120
100
80
60
40
A: R_g = 4.7Ω
B: R_g = 3.3Ω
20
C: R_g = 2.2Ω
0
0 50 100 150 200 250 300 350 400
Collector current, I_C - (A)
Fig. 6 Typical turn-on energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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