GP201MHS18 Datasheet, PDF (7/10 Pages) Dynex Semiconductor – Low VCE(SAT) Half Bridge IGBT Module

GP201MHS18
1000
I_C max. (single pulse)
1000
Diode
100
100
Transistor
50µs
100µs
10
10
t_p = 1ms
1
1
10
100
1000
Collector-emitter voltage, V_ce - (V)
10000
1
0.001
0.01
0.1
1
Pulse width, t_p - (s)
10
Fig. 11 Forward bias safe operating area
Fig. 12 Transient thermal impedance
350
PWM Sine Wave
Power Factor = 0.9,
300
Modulation Index =1
250
200
150
100
50 ^Conditions:
T_j = 125˚C, T_case = 75˚C
R_g = 4.7Ω, V_CC = 900V
0
1
10
20
f_max - (kHz)
Fig. 13 3 Phase inverter operating frequency
350
300
250
200
150
100
50
0
0
20 40 60 80 100 120 140 160
Case temperature, T_case - (˚C)
Fig. 14 DC current rating vs case temperature
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
7/10
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