GP201MHS18 Datasheet, PDF (5/10 Pages) Dynex Semiconductor – Low VCE(SAT) Half Bridge IGBT Module

GP201MHS18
TYPICAL CHARACTERISTICS
400
Common emitter
T_case = 25˚C
350
V_ge = 20/15/12/10V
300
250
200
150
100
50
0
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, V_ce - (V)
Fig. 3 Typical output characteristics
400
Common emitter
T_case = 125˚C
350
V_ge = 20/15/12/10V
300
250
200
150
100
50
0
0
1.0
2.0
3.0
4.0
5.0
6.0
Collector-emitter voltage, V_ce - (V)
Fig. 4 Typical output characteristics
180
T_case = 125˚C
160
V_GE = ±15V
V_CE = 900V
A
140
B
120
100
C
80
60
40
A: R_g = 10Ω
20
B: R_g = 6.2Ω
C: R_g = 4.7Ω
0
0 20 40 60 80 100 120 140 160 180 200
Collector current, I_C - (A)
Fig. 5 Typical turn-on energy vs collector current
160
T_case = 125˚C
V_GE = ±15V
140 _{VCE = 900V}
A
120
B
C
100
80
60
40
20
A: R_g = 10Ω
B: R_g = 6.2Ω
C: R_g = 4.7Ω
0
0 20 40 60 80 100 120 140 160 180 200
Collector current, I_C - (A)
Fig. 6 Typical turn-off energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/10
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