GP201MHS18 Datasheet, PDF (6/10 Pages) Dynex Semiconductor – Low VCE(SAT) Half Bridge IGBT Module

GP201MHS18
50
V_GE = ±15V
45 ^VCE ^{= 900V}
40
T_case = 125˚C
35
T_case = 25˚C
30
25
20
15
10
5
0
0 25 50 75 100 125 150 175 200
Collector current, I_T - (A)
600
t_d(off)
500
t_d(on)
400
300
t_f
200
100
t_r
T_case = 125˚C
V_GE = ±15V
V_CE = 900V
R_g = 4.7Ω
0
0 20 40 60 80 100 120 140 160 180 200
Collector current, I_C - (A)
Fig. 7 Typical diode turn-off energy vs collector current
Fig. 7 Typical diode reverse recovery charge vs collector current
400
350
T_j = 25˚C
300
250
T_j = 125˚C
200
150
100
50
0
0
0.5
1.0 1.5 2.0 2.5 3.0 3.5
Foward voltage, V_F - (V)
Fig. 9 Diode typical forward characteristics
500
450
400
350
300
250
200
150
100
T_case = 125˚C
V_ge = ±15V
50 ^{Rg(min) = 4.7Ω}
R_g(min) : Minimum recommended value
0
0
400
800
1200
1600
Collector-emitter voltage, V_ce - (V)
2000
Fig. 10 Reverse bias safe operating area
6/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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