GP201MHS18 Datasheet, PDF (1/10 Pages) Dynex Semiconductor – Low VCE(SAT) Half Bridge IGBT Module

GP201MHS18
FEATURES
s Low V_CE(SAT)
s Non Punch Through Silicon
s Isolated Copper Baseplate
s Low Inductance Internal Construction
s 200A Per Arm
APPLICATIONS
s High Reliability Inverters
s Motor Controllers
s Traction Drives
s Resonant Converters
GP201MHS18
Low V_CE(SAT) Half Bridge IGBT Module
DS5290-2.1 January 2001
KEY PARAMETERS
V_CES
V_CE(sat)
I_C
I_C(PK)
(typ)
(max)
(max)
1800V
2.6V
200A
400A
11(C²)
1(E₁C₂)
9(C¹)
2(E₂)
6(G²)
7(E²)
3(C₁)
5(E¹)
4(G¹)
The Powerline range of high power modules includes half
bridge, dual and single switch configurations covering voltages
from 600V to 3300V and currents up to 4800A.
The GP201MHS18 is a half bridge 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. Designed with low V_CE(SAT) to minimise conduction
losses, the module is of particular relevance in low to medium
frequency applications. The IGBT has a wide reverse bias safe
operating area (RBSOA) ensuring reliability in demanding
applications.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP201MHS18
Note: When ordering, please use the complete part number.
Fig. 1 Half bridge circuit diagram
11
1
2
3
6
10
7
8
5
9
4
Outline type code: M
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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