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| GP201MHS18 Datasheet, PDF (2/10 Pages) Dynex Semiconductor – Low VCE(SAT) Half Bridge IGBT Module | |||
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GP201MHS18
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25ËC unless stated otherwise
Symbol
Parameter
Test Conditions
VCES
VGES
IC
I
C(PK)
Pmax
Visol
Collector-emitter voltage
VGE = 0V
Gate-emitter voltage
-
Collector current
DC, Tcase = 80ËC for Tj = 125ËC
Peak collector current
1ms, Tcase = 120ËC
Max. transistor power dissipation Tcase = 25ËC, Tj = 150ËC
Isolation voltage
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Max. Units
1800 V
±20 V
200 A
400 A
1500 W
4000 V
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Test Conditions
Rth(j-c)
Thermal resistance - transistor (per arm)
Continuous dissipation -
junction to case
Rth(j-c)
Thermal resistance - diode (per arm)
Continuous dissipation -
junction to case
R
th(c-h)
Thermal resistance - case to heatsink (per module) Mounting torque 5Nm
(with mounting grease)
Tj
Junction temperature
Transistor
Diode
T
Storage temperature range
stg
-
Screw torque
-
Mounting - M6
Min. Max. Units
-
84 ËC/kW
-
160 ËC/kW
-
15 ËC/kW
-
150 ËC
-
125 ËC
â40 125 ËC
-
5
Nm
2/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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