GP200MLS12 Datasheet, PDF (6/10 Pages) Dynex Semiconductor – IGBT Chopper Module Preliminary Information

GP200MLS12
36
V_GE = ±15V
32 ^{VCE = 900V}
28
T_case = 125˚C
24
20
T_case = 25˚C
16
12
8
4
0
0 25 50 75 100 125 150 175 200
Collector current, I_T - (A)
Fig. 7 Freewheel diode typical turn-off energy
vs collector current
900
800
700
600
500
400
300
200
100
0
0
t_d(off)
t_d(on)
T_j = 125˚C
V_GE = ±15V
V_CE = 600V
R_g = 4.7Ω
t_f
t_r
50
100
150
200
Collector current, I_C - (A)
Fig. 8 Typical switching characteristics
400
10000
T_j = 25˚C
350
T_j = 125˚C
300
1000 I_C max. (single pulse)
250
200
100
I_{C max. DC}
50µs
100µs
150
100
10
(continuous)
t_p = 1ms
50
0
1
0
0.5
1
1.5
2
2.5
3
3.5
1
Forward voltage, V_F - (V)
10
100
1000
Collector-emitter voltage, V_ce - (V)
10000
Fig. 9 Freewheel diode typical forward characteristics
Fig. 10 Reverse bias safe operating area
6/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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