GP200MLS12 Datasheet, PDF (3/10 Pages) Dynex Semiconductor – IGBT Chopper Module Preliminary Information

GP200MLS12
ELECTRICAL CHARACTERISTICS
T_case = 25˚C unless stated otherwise.
Symbol
Parameter
Test Conditions
I_CES
I_GES
V_GE(TH)
V
CE(sat)
I_F
I_FM
V
F
C_ies
L_M
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
V = 0V, V = V
GE
CE
CES
V_GE = 0V, V_CE = V_CES, T_case = 125˚C
V_GE = ±20V, V_CE = 0V
I_C = 10mA, V_GE = V_CE
V_GE = 15V, I_C = 200A
V_GE = 15V, I_C = 200A, , T_case = 125˚C
DC
Diode maximum forward current
t_p = 1ms
Diode forward voltage - antiparallel diode I_F = 200A
I_F = 200A, T_case = 125˚C
Diode forward voltage - freewheel diode I_F = 200A
I = 200A, T = 125˚C
F
case
Input capacitance
V_CE = 25V, V_GE = 0V, f = 1MHz
Module inductance
-
Min. Typ. Max. Units
-
-
1
mA
-
-
12 mA
-
-
±1 µA
4.5
-
6.5
V
-
2.7
3.5
V
-
3.2
4.0
V
-
-
200 A
-
-
400 A
-
2.2
2.4
V
-
2.3
2.5
V
-
1.7
2.1
V
-
1.7
2.2
V
25
-
nF
30
-
nH
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/10
www.dynexsemi.com