GP200MLS12 Datasheet, PDF (4/10 Pages) Dynex Semiconductor – IGBT Chopper Module Preliminary Information

GP200MLS12
ELECTRICAL CHARACTERISTICS
T_case = 25˚C unless stated otherwise
Symbol
Parameter
t
Turn-off delay time
d(off)
t_f
Fall time
E_OFF
Turn-off energy loss
t_d(on)
Turn-on delay time
t
Rise time
r
E_ON
Turn-on energy loss
Q_rr
Diode reverse recovery charge -
freewheel diode
T_case = 125˚C unless stated otherwise
Symbol
Parameter
t
Turn-off delay time
d(off)
t_f
Fall time
E_OFF
Turn-off energy loss
t_d(on)
Turn-on delay time
t_r
Rise time
E_ON
Turn-on energy loss
Q
Diode reverse recovery charge -
rr
freewheel diode
Test Conditions
I_C = 200A
V_GE = ±15V
V = 600V
CE
R_G(ON) = R_G(OFF) = 4.7Ω
L ~ 100nH
I_F = 200A, V_R = 50% V_CES,
dI_F/dt = 2500A/µs
Min. Typ. Max. Units
-
500 700 ns
-
150 200 ns
-
25
35 mJ
-
400 550 ns
-
80 110 ns
-
20
30 mJ
-
20
30 µC
Test Conditions
I_C = 200A
V_GE = ±15V
V = 600V
CE
R_G(ON) = R_G(OFF) = 4.7Ω
L ~ 100nH
I_F = 200A, V_R = 50% V_CES,
dI_F/dt = 2000A/µs
Min. Typ. Max. Units
-
600 800 ns
-
200 250 ns
-
40
50 mJ
-
500 650 ns
-
110 150 ns
-
40
55 mJ
-
55
70 µC
4/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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