GP200MLS12 Datasheet, PDF (1/10 Pages) Dynex Semiconductor – IGBT Chopper Module Preliminary Information

GP200MLS12
FEATURES
s Internally Configured With Lower Arm Controlled
s Non Punch Through Silicon
s Isolated Copper Baseplate
s Low Inductance Internal Construction
GP200MLS12
IGBT Chopper Module
Preliminary Information
DS5421-1.5 April 2001
KEY PARAMETERS
V_CES
V_CE(sat)
I_C
I_C(PK)
(typ)
(max)
(max)
1200V
2.7V
200A
400A
APPLICATIONS
s High Power Choppers
s Motor Controllers
s Induction Heating
s Resonant Converters
s Power Supplies
The Powerline range of high power modules includes half
bridge, dual and single switch configurations covering voltages
from 600V to 3300V and currents up to 2400A.
The GP200MLS12 is a 1200V, n channel enhancement
mode, insulated gate bipolar transistor (IGBT) chopper module
configured with the lower arm of the bridge controlled. The
module incoporates high current rated freewheel diodes. The
IGBT has a wide reverse bias safe operating area (RBSOA)
ensuring reliability in demanding applications.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP200MLS12
Note: When ordering, please use the whole part number.
11(C²)
1(A₁C₂)
2(E₂)
6(G²)
7(E²)
3(K₁)
Fig. 1 Chopper circuit diagram
11
1
2
3
6
10
7
8
5
9
4
Outline type code: M
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/10
www.dynexsemi.com