GP200MLS12 Datasheet, PDF (2/10 Pages) Dynex Semiconductor – IGBT Chopper Module Preliminary Information

GP200MLS12
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T_case = 25˚C unless stated otherwise
Symbol
Parameter
Test Conditions
V_CES
V
GES
I_C
I_C(PK)
P_max
V_isol
Collector-emitter voltage
V_GE = 0V
Gate-emitter voltage
-
Collector current
DC, T_case = 72˚C
Peak collector current
1ms, T = 72˚C
case
Max. transistor power dissipation T_case = 25˚C, T_j = 150˚C
Isolation voltage
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Max. Units
1200 V
±20 V
200 A
400 A
1490 W
2500 V
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Test Conditions
R_th(j-c)
Thermal resistance - transistor (per arm)
Continuous dissipation -
junction to case
R_th(j-c)
Thermal resistance - antiparallel diode
Thermal resistance - freewheel diode
Continuous dissipation
R_th(c-h)
Thermal resistance - case to heatsink (per module) Mounting torque 5Nm
(with mounting grease)
T_j
Junction temperature
Transistor
Diode
T
Storage temperature range
stg
-
Screw torque
-
Mounting - M6
Electrical connections - M6
Min. Max. Units
-
84 ˚C/kW
-
160 ˚C/kW
-
80 ˚C/kW
-
15 ˚C/kW
-
150 ˚C
-
125 ˚C
–40 125 ˚C
-
5
Nm
-
5
Nm
2/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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