GP1601FSS18 Datasheet, PDF (6/9 Pages) Dynex Semiconductor – Single Switch Low VCE(SAT) IGBT Module

GP1601FSS18
3200
2800
2400
T_j = 25˚C
2000
1600
T_j = 125˚C
1200
800
400
0
0
0.5
1.0 1.5 2.0 2.5 3.0 3.5
Foward voltage, V_F - (V)
Fig. 7 Diode typical forward characteristics
3500
3000
2500
2000
1500
1000
500
Conditions:
T_case = 125˚C,
V_ge = 15V,
R_g(off) = 2.2Ω
0
0 200 400 600 800 1000 1200 1400 1600 1800 2000
Collector-emitter voltage, Vce - (V)
Fig. 8 Reverse bias safe operating area
10000
I_C max. (single pulse)
1000
100
10
100
10
50µs
100µs
t_p = 1ms
1
Diode
Transistor
1
1
10
100
1000
10000
0.1
0.001
0.01
0.1
1
10
Collector-emitter voltage, V_ce - (V)
Pulse width, t_p - (s)
Fig. 9 Forward bias safe operating area
Fig. 10 Transient thermal impedance
6/9
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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