GP1601FSS18 Datasheet, PDF (5/9 Pages) Dynex Semiconductor – Single Switch Low VCE(SAT) IGBT Module

GP1601FSS18
TYPICAL CHARACTERISTICS
3200
2800
Common emitter
T_case = 25˚C
V_ge = 20/15/12/10V
2400
2000
1600
1200
800
400
0
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, V_ce - (V)
Fig. 3 Typical output characteristics
3200
2800
Common emitter
T_case = 125˚C
V_ge = 20/15/12/10V
2400
2000
1600
1200
800
400
0
0
1.0
2.0
3.0
4.0
5.0
6.0
Collector-emitter voltage, V_ce - (V)
Fig. 4 Typical output characteristics
1200
1000
T_case = 125˚C
V_GE = ±15V
V_CE = 900V
R_g = 2.2Ω
800
600
E_OFF
E_ON
400
E_REC
200
0
0 200 400 600 800 1000 1200 1400 1600
Collector current, I_C - (A)
Fig. 5 Typical turn-on energy vs collector current
2000
T_case = 125˚C
1800 ^VGE ^{= ±15V}
E_ON
V_CE = 900V
1600 ^{IT = 1600A}
1400
1200
E_OFF
1000
800
600
400
E_REC
200
0
0 1 2 3 4 5 6 7 8 9 10
Gate resistance, R_G - (Ohms)
Fig. 6 Typical turn-off energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/9
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