GP1601FSS18 Datasheet, PDF (1/9 Pages) Dynex Semiconductor – Single Switch Low VCE(SAT) IGBT Module

GP1601FSS18
GP1601FSS18
Single Switch Low V_CE(SAT) IGBT Module
Replaces January 2000 version, DS5248-3.0
DS5248-4.2 January 2001
FEATURES
s Low V_CE(SAT)
s Non Punch Through Silicon
s Isolated Copper Baseplate
s Low Inductance Internal Construction
s 1600A Per module
KEY PARAMETERS
V_CES
V_CE(sat)
I_C
I_C(PK)
(typ)
(max)
(max)
1800V
2.6V
1600A
3200A
APPLICATIONS
s High Reliability Inverters
s Motor Controllers
s Traction Drives
s Resonant Converters
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 600V to
3300V and currents up to 4800A.
The GP1601FSS18 is a single switch 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. Designed with low V_CE(SAT) to minimise conduction
losses, the module is of particular relevance in low to medium
frequency applications. The IGBT has a wide reverse bias safe
operating area (RBSOA) ensuring reliability in demanding
applications.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP1601FSS18
Note: When ordering, please use the whole part number.
Aux C
External connection
C1
C2
G
Aux E
E1
E2
External connection
Fig. 1 Single switch circuit diagram
Aux C
E1
C1
Aux E
G
E2
C2
Outline type code: F
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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