GP1601FSS18 Datasheet, PDF (3/9 Pages) Dynex Semiconductor – Single Switch Low VCE(SAT) IGBT Module

GP1601FSS18
ELECTRICAL CHARACTERISTICS
T_case = 25˚C unless stated otherwise.
Symbol
Parameter
I_CES
Collector cut-off current
I
GES
V_GE(TH)
V_CE(sat)
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
I
Diode forward current
F
I_FM
Diode maximum forward current
V_F
Diode forward voltage
C
Input capacitance
ies
L_M
Module inductance
Test Conditions
V_GE = 0V, V_CE = V_CES
V_GE = 0V, V_CE = V_CES, T_case = 125˚C
V_GE = ±20V, V_CE = 0V
I_C = 80mA, V_GE = V_CE
V = 15V, I = 1600A
GE
C
V_GE = 15V, I_C = 1600A, T_case = 125˚C
DC
t_p = 1ms
I = 1600A
F
I_F = 1600A, T_case = 125˚C
V_CE = 25V, V_GE = 0V, f = 1MHz
-
Min. Typ. Max. Units
-
-
2
mA
-
-
50 mA
-
-
8
µA
4.5
5.5
6.5
V
-
2.6
3.2
V
-
3.3
4
V
-
-
1600 A
-
-
3200 A
-
2.2
2.5
V
-
2.3
2.6
V
-
180
-
nF
-
15
-
nH
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/9
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