GP1601FSS18 Datasheet, PDF (4/9 Pages) Dynex Semiconductor – Single Switch Low VCE(SAT) IGBT Module

GP1601FSS18
ELECTRICAL CHARACTERISTICS
T = 25˚C unless stated otherwise
case
Symbol
Parameter
t_d(off)
t_f
E
OFF
t_d(on)
t_r
E_ON
Q
rr
I_rr
E_REC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
T_case = 125˚C unless stated otherwise
Symbol
Parameter
t_d(off)
t_f
E_OFF
t
d(on)
t_r
E_ON
Q_rr
I
rr
E_REC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Test Conditions
I = 1600A
C
V_GE = ±15V
V_CE = 900V
R_G(ON) = R_G(OFF) = 2.2Ω
L ~ 50nH
I_F = 1600A, V_R = 50% V_CES,
dI_F/dt = 6000A/µs
Min. Typ. Max. Units
-
1500 1650 ns
-
300 350 ns
-
850 1050 mJ
-
400 550 ns
-
300 450 ns
-
500 700 mJ
-
300 400 µC
-
750
-
A
-
200
-
mJ
Test Conditions
I_C = 1600A
V
GE
=
±15V
V_CE = 900V
R_G(ON) = R_G(OFF) = 2.2Ω
L ~ 50nH
I_F = 1600A, V_R = 50% V_CES,
dI_F/dt = 5000A/µs
Min. Typ. Max. Units
-
1700 1900 ns
-
300 380 ns
-
1100 1300 mJ
-
500 700 ns
-
350 500 ns
-
700 900 mJ
-
550 650 µC
-
850
-
A
-
320
-
mJ
4/9
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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