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| DG306AE25_15 Datasheet, PDF (2/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor | |||
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DG306AE25
SURGE RATINGS
Symbol
Parameter
ITSM
Surge (non-repetitive) on-state current
I2t
I2t for fusing
diT/dt Critical rate of rise of on-state current
dVD/dt Rate of rise of off-state voltage
LS
Peak stray inductance in snubber circuit
Conditions
10ms half sine. Tj = 125oC
10ms half sine. Tj =125oC
VD = 2000V, IT = 600A, Tj = 125oC, IFG > 20A,
Rise time > 1.0µs
To 66% VDRM; RGK ⤠1.5â¦, Tj = 125oC
To 66% VDRM; VRG = -2V, Tj = 125oC
-
Max. Units
3.5
kA
61250 A2s
300
A/µs
500
1000
V/µs
V/µs
200
nH
GATE RATINGS
Symbol
Parameter
VRGM
IFGM
PFG(AV)
PRGM
diGQ/dt
tON(min)
tOFF(min)
Peak reverse gate voltage
Peak forward gate current
Average forward gate power
Peak reverse gate power
Rate of rise of reverse gate current
Minimum permissable on time
Minimum permissable off time
Conditions
This value maybe exceeded during turn-off
Min. Max. Units
-
16
V
-
50
A
-
10
W
-
6
kW
10
50 A/µs
20
-
µs
40
-
µs
THERMAL RATINGS
Symbol
Parameter
Conditions
Double side cooled
Rth(j-hs)
Rth(c-hs)
Tvj
TOP/Tstg
-
DC thermal resistance - junction to heatsink Anode side cooled
surface
Cathode side cooled
Contact thermal resistance
Clamping force 6.0kN
With mounting compound
Virtual junction temperature
Operating junction/storage temperature range
Clamping force
per contact
Min. Max. Units
-
0.075 oC/W
-
0.12 oC/W
-
0.20 oC/W
- 0.018 oC/W
-
125
oC
-40 125
oC
5.0 6.0
kN
2/19
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