DG306AE25_15 Datasheet, PDF (18/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG306AE25
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated
otherwise. DO NOT SCALE.
2 holes Ø3.6 ± 0.1 x 2.0 ± 0.1 deep
(One in each electrode)
Cathode tab
Cathode
Gate
Ø42max
Ø25nom.
Ø25nom.
Anode
Nominal weight: 82g
Clamping force: 6kN ±10%
Leads 12 AWG cables 160mm
Package outine type code: E
ASSOCIATED PUBLICATIONS
Title
Calculating the junction temperature or power semiconductors
GTO gate drive units
Recommendations for clamping power semiconductors
Use of V , r on-state characteristic
TO T
Impoved gate drive for GTO series connections
Application Note
Number
AN4506
AN4571
AN4839
AN5001
AN5177
18/19