DG306AE25_15 Datasheet, PDF (14/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG306AE25
2.0
Conditions:
I_T = 600A
Cs = 1.0µF
1.5
T_j = 125°C
1.0
T_j = 25°C
0.5
0.5
10 15 20 25 30 35 40 45 50
Rate of rise of reverse gate current dI_GQ/dt - (A/µs)
Fig.23 Gate fall time vs rate of rise of revese gate current
200
Conditions:
175
Cs = 1.0µF
dI_GQ/dt = 15A/µs
150
T_j = 125°C
T_j = 25°C
125
100
75
50
25
0
0
100
200
300
400
500
600
On-state current - (A)
Fig.24 Peak reverse gate current vs on-state voltage
14/19