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| DG306AE25_15 Datasheet, PDF (17/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor | |||
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DG306AE25
0.9VD
VD
0.9IT
dVD/dt
IT
VD VDM
td tr
0.1VD
dIFG/dt
0.1IFG
tgt
IFG
VFG
tw1
VDP
tgs
ITAIL
tgf
tgq
IG(ON)
0.1IGQ
QGQ
0.5IGQM
IGQM
V(RG)BR
VRG
Recommended gate conditions:
ITCM = 600A
IFG = 20A
IG(ON) = 2A d.c.
tw1(min) = 10µs
IGQM = 190A
diGQ/dt = 15A/µs
QGQ = 1300µC
VRG(min) = 2.0V
VRG(max) = 16V
These are recommended Dynex Semiconductor conditions. Other conditions are permitted
according to users gate drive specifications.
Fig.29 General switching waveforms
17/19
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