DG306AE25_15 Datasheet, PDF (10/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG306AE25
10/19
550
Conditions:
500
T_j = 25°C
Cs = 1.0µF
dI_GQ/dt = 15A/µs
450
400
350
300
V_DM = 2000V
V_DM = 1500V
V_DM = 1000V
250
200
150
100
50
0
100
200
300
400
500
600
On-state current - (A)
Fig.15 Turn-off energy loss vs on-state current
575
V_DM = 2000V
550
525
500
475
V_DM = 1500V
450
Conditions:
I_T = 600A
425
T_j = 25°C
Cs = 1.0µF
400
V_DM = 1000V
375
350
10 15 20 25 30 35 40 45 50
Rate of rise of reverse gate current dI_GQ/dt- (A/µs)
Fig.16 Turn-off energy vs rate of rise of reverse gate current